A study on improving the reliability of polysilicon TFTs employing dual-layered gate insulator

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

  Kim, Chang Yeon ^a,b   Park, Sang Geun ^a   Han, Min Koo ^a   Lee, Hong Koo ^b   Lee, Seok Woo ^b   Jung, Sang Hoon ^b   Kim, Chang Dong ^b   Kang, In Byeong ^b  

^a Seoul National University   (South Korea)

^b LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; LEAKAGE CURRENTS; POLYSILICON; PROBLEM SOLVING; SILICON NITRIDE; THERMAL CONDUCTIVITY;

DUAL-LAYERED GATE INSULATOR; THIN GATE INSULATOR;

THIN FILM TRANSISTORS;

EID: 40549126345     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2835207     Document Type: Article

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