Impacts of N2 and NH3 plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

IEEE Electron Device Letters

Volumn 29, Issue 11, 2008, Pages 1236-1238

  Ma, Ming Wen ^a   Chao, Tien Sheng ^a   Chiang, Tsung Yu ^a   Wu, Woei Cherng ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

High ; Low temperature polycrystalline silicon thin film transistors (LTPS TFTs); N2 plasma; NH3 plasma

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; IRON COMPOUNDS; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SILICON; SURFACE ROUGHNESS; SURFACE TREATMENT; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

DRIVING CURRENTS; HIGH FIELDS; HIGH GATE BIASES; LOW THRESHOLD VOLTAGES; LOW-TEMPERATURE POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS (LTPS-TFTS); N2 PLASMA; NH3 PLASMA; PLASMA SURFACE TREATMENTS; POLYCRYSTAL LINES; SUBTHRESHOLD SWINGS; SURFACE ROUGHNESS SCATTERINGS;

GATE DIELECTRICS;

EID: 55149119393     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2004781     Document Type: Article

References (12)

1. 3/oxynitride gate dielectric," IEEE Electron Device Lett., vol. 29, no. 4, pp. 353-356, Apr. 2008.
2. 3 gate dielectric," IEEE Electron Device Lett., vol. 29, no. 1, pp. 96-98, Jan. 2008.
3. M.-J. Yang, C.-H. Chien, Y.-H. Lu, G.-L. Luo, S.-C. Chiu, C.-C. Lou, and T.-Y. Huang, "High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric," IEEE Electron Device Lett., vol. 28, no. 10, pp. 902-904, Oct. 2007.
4. 2 gate dielectric," IEEE Electron Device Lett., vol. 27, no. 5, pp. 360-363, May 2006.
5. 3 as the gate dielectric," IEEE Electron Device Lett., vol. 26, no. 6, pp. 384-386, Jun. 2005.
6. 3 plasma passivation on n-channel polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 44, no. 1, pp. 64-68, Jan. 1997.
7. 3 plasma passivation on polysilicon thin-film transistors," IEEE Electron Device Lett., vol. 16, no. 11, pp. 503-505, Nov. 1995.
8. I.-W. Wu, T.-Y. Huang, W. B. Jackson, A. G. Lewis, and A. C. Chiang, "Passivation kinetics of two types of defects in polysilicon TFI by plasma hydrogenation," IEEE Electron Device Lett., vol. 12, no. 4, pp. 181-183, Apr. 1991.
9. 2 MOSFETs by high-temperature forming gas annealing," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 384-390, Feb. 2003.
10. C. A. Dimitriadis, P. A. Coxon, L. Dozsa, L. Papadimitriou, and N. Economou, "Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures," IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 598-606, Mar. 1992.
11. J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, "Conductivity behavior in polycrystalline semiconductor thin film transistors," J. Appl. Phys., vol. 53, no. 2, pp. 1193-1202, Feb. 1982.
12. R. E. Proano, R. S. Misage, and D. G. Ast, "Development and electrical properties of undoped polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1915-1922, Sep. 1989.