O2-Plasma passivation effects on polysilicon thin film transistors using ion plating method

Journal of the Electrochemical Society

Volumn 145, Issue 1, 1998, Pages 252-258

  Yeh, Ching Fa ^a   Chen, Tai Ju ^a   Lin, Ming Tyang ^a   Kao, Jiann Shiun ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b National Science Council   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONIC DENSITY OF STATES; ELECTROPLATING; FILM PREPARATION; MAGNETIC VARIABLES MEASUREMENT; OXIDES; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; THIN FILM TRANSISTORS;

ELECTRON SPIN RESONANCE MEASUREMENT; ION PLATING METHOD; PLASMA PASSIVATION EFFECTS; POLYSILICON THIN FILM TRANSISTORS;

PASSIVATION;

EID: 0031648847     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838243     Document Type: Article

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