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Electrochemical and Solid-State Letters

Volumn 12, Issue 10, 2009, Pages

Perfect conformal deposition of electroless Cu for high aspect ratio through-Si Vias

(8) Inoue, F a Harada, Y a Koyanagi, M b Fukushima, T b Yamamoto, K c Tanaka, S c Wang, Z d Shingubara, S a

a KANSAI UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

c National Institute of Communication Technology (Japan)

d SHAANXI NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BIS(3-SULFOPROPYL) DISULFIDE; CONFORMAL DEPOSITION; ELECTROLESS; HIGH ASPECT RATIO; PACKING DENSITY; PLATING BATH; STRONG DEMAND; THREE DIMENSIONAL INTEGRATION; THROUGH SILICON VIAS;

ELECTROPLATING; PHOTORESISTS; PRESSURE DROP;

ASPECT RATIO;

EID: 68949146657 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3193535 Document Type: Article

Times cited : (42)

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