Electroless plating of copper on metal-nitride diffusion barriers initiated by displacement plating

Electrochemical and Solid-State Letters

Volumn 6, Issue 3, 2003, Pages

  Wang, Z ^a   Ida, T ^a   Sakaue, H ^a   Shingubara, S ^a   Takahagi, T ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COPPER PLATING; ETCHING; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS;

DISPLACEMENT PLATING;

ELECTROLESS PLATING;

EID: 0037339079     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1541255     Document Type: Article

References (22)

1. J. S. H. Chao, H. Kang, S. S. Wong, and Y. Shacham-Diamand, MRS Bull., 18, 31 (1993).
2. J. C. Chang and M. C. Chen, J. Electrochem. Soc., 145, 3170 (1998).
3. X. Chen, G. G. Peterson, C. Goldberg, G. Nuesca, H. L. Frisch, B. Arkles, and J. Sullivan, J. Mater. Res., 14, 2043 (1999).
4. J. C. Chang and M. C. Chen, Thin Solid Films, 322, 213 (1998).
5. P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligianni, IBM J. Res. Dev., 42, 567 (1998).
6. S. Shingubara, in Proceedings of the 7th Dielectrics and Conductors for ULSI Multilevel Interconnection Conference, IEEE, 89-644090, p. 167, March 5, 2001.
7. J. Wada, A. Sakata, H. Matsuyama, K. Watanaba, and T. Katata, in Proceedings of the International Interconnect Conference 2002, IEEE, p. 108 (2000).
8. (a) S. Shingubara, T. Ida, H. Sawa, H. Sakaue, and T. Takahagi, in Proceedings of the Advanced Metallization Conference 2000, Materials Research Society, Vol, ULSI-XVI, p. 229 (2001)
9. (b) Z. Wang, T. Ida, H. Sawa, H. Sakaue, S. Shingubara, and T. Takahagi, in Proceedings of the Advanced Metallization Conference 2001, Materials Research Society, ULSI-XVII, p. 185 (2002)
10. (c) S. Shingubara, Z. Wang, T. Ida, H. Sakaue, and T. Talahagi, in Proceedings of the International Interconnect Conference 2002, IEEE, p. 176 (2002).
11. H. H. Hsu, K. H. Lin, S. J. Lin, and J. W. Yeh, J. Electrochem. Soc., 148, C47 (2001).
12. Y. Shacham-Diamand, Electrochem. Solid-State Lett., 3, 279 (2000).
13. T. Osaka, N. Takano, and S. Komaba, Chem. Lett., 7, 657 (1998).
14. H. H. Hsu, C. C. Hsieh, M. H. Chen, S. J. Lin, and J. W. Yeh, J. Electrochem. Soc., 148, C590 (2001).
15. L. A. Nakahara, T. Ohmori, K. Hashimoto, and F. Fujishima, J. Electroanal. Chem., 333, 363 (1992).
16. J. C. Patterson, M. O'Relly, G. M. Crean, and J. Barrett, Microelectron. Eng., 33, 65 (1997).
17. L. A. Nakahara, T. Ohmori, K. Hashimoto, and F. Fujishima, J. Vac. Sci. Technol. A, 11, 763 (1993).
18. J. C. Patterson, C. N. Dheasuna, J. Barrett, T. R. Spalding, M. O'Relly, X. Jiang, and G. M. Crean, Appl. Surf. Sci., 91, 124 (1993).
19. J. D. Lee, A New Concise Inorganic Chemistry, third ed., p. 337, Van Nostrand Reinhold Co. Ltd., Berkshire, MA (1977).
20. N. Takano, N. Hosada, T. Yamada, and T. Osaka, Electrochim. Acta, 44, 3743 (1999).
21. Z. Wang, A. Furuya, K. Yasuda, H. Ikeda, T. Baba, M. Hagiwara, S. Toki, S. Shingubara, H. Kubota, and T. Onmi, J. Adhes. Sci. Technol., 16, 1027 (2002).
22. S. Abe, T. Fujinami, T. Aono, and H. Honma, Surf. Technol., 48, 61 (1997).