Decrease in slow current transients and current collapse in GaN-based FETs with a filed plate

2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Volumn , Issue , 2008, Pages 183-186

  Nakajima, A ^a   Itagaki, K ^a   Horio, K ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; CURRENT COLLAPSE; CURRENT TRANSIENTS; DEEP DONOR; DRAIN LAG; FIELD PLATES; I - V CURVE; MESFETS; OPTIMUM THICKNESS; SEMI-INSULATING BUFFER; TRANSIENT CHARACTERISTIC; TRAPPING EFFECTS; TWO-DIMENSIONAL TRANSIENT;

BUFFER LAYERS; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INSULATION; MESFET DEVICES; MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; TRANSIENT ANALYSIS;

ELECTRIC CURRENT MEASUREMENT;

EID: 66649086234     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2008.4772259     Document Type: Conference Paper

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