Characterization of intermediate In/Ag layers of low temperature fluxless solder based wafer bonding for MEMS packaging

Sensors and Actuators, A: Physical

Volumn 154, Issue 1, 2009, Pages 85-91

  Lee, Chengkuo ^a,b   Yu, Aibin ^b   Yan, Liling ^b   Wang, Haitao ^a   He, Johnny Han ^b   Zhang, Qing Xin ^b   Lau, John H ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Fluxless; Indium; MEMS; Solder; Wafer bonding; Wafer level packaging

Indexed keywords

ADDITIONAL ANNEALING; AGING TREATMENT; BONDING CONDITIONS; BONDING INTERFACES; BONDING LAYERS; BONDING PROCESS; BONDING TEMPERATURES; CAN DESIGN; EUTECTIC COMPOSITION; FLUXLESS; HIGH MELTING; HIGH TEMPERATURE; INTERMETALLIC COMPOUNDS; LONG TERM; LOW MELTING TEMPERATURES; LOW TEMPERATURES; MATERIALS SYSTEMS; MEMS PACKAGING; MEMSDEVICES; PACKAGING PROCESS; PROCESS CONDITION; RESEARCH ACTIVITIES; ROOM TEMPERATURE; SOLDER; SOLDER ALLOYS; WAFER LEVEL PACKAGING;

BRAZING; ELECTRONICS PACKAGING; INDIUM; MELTING POINT; MEMS; METAL MELTING; MICROELECTROMECHANICAL DEVICES; PHASE INTERFACES; SEMICONDUCTING INTERMETALLICS; SILVER; SILVER ALLOYS; SOLDERING ALLOYS; STAINLESS STEEL; WELDING;

WAFER BONDING;

EID: 68849091021     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2008.10.011     Document Type: Article

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