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Volumn 255, Issue 22, 2009, Pages 9211-9216

Spectroscopic ellipsometry of very thin tantalum pentoxide on Si

Author keywords

Algorithm; Constituents; Depth profile; High k; Spectroscopic ellipsometry; T 2 O 5 Si

Indexed keywords

ALGORITHMS; DEPTH PROFILING; TANTALUM OXIDES;

EID: 68649097114     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.07.014     Document Type: Article
Times cited : (9)

References (29)
  • 4
    • 3042715207 scopus 로고    scopus 로고
    • Houssa M. (Ed), Inst. Phys. Publ., Bristol, UK
    • In: Houssa M. (Ed). High-k gate dielectrics (2004), Inst. Phys. Publ., Bristol, UK
    • (2004) High-k gate dielectrics


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.