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Volumn 33, Issue 5, 2004, Pages 285-291

Uniformity of optical constants in amorphous Ta2O5 thin films as measured by spectroscopic ellipsometry

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; ENERGY GAP; OPTICAL FILTERS; RANDOM ACCESS STORAGE; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS; THIN FILMS;

EID: 5444221962     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:RUMI.0000043044.12580.1e     Document Type: Article
Times cited : (3)

References (17)
  • 3
    • 0032606526 scopus 로고    scopus 로고
    • 5 thin films for dynamic random access memory applications
    • 5 Thin Films for Dynamic Random Access Memory Applications, J. Appl. Phys., 1999. vol. 86, no. 2, pp. 871-880.
    • (1999) J. Appl. Phys. , vol.86 , Issue.2 , pp. 871-880
    • Joshi, P.C.1    Cole, M.W.2
  • 6
    • 0035872897 scopus 로고    scopus 로고
    • High-k gate dielectrics: Current status and materials properties
    • Wilk, G.D., Wallace, R.M., and Anthony, J.M., High-k Gate Dielectrics: Current Status and Materials Properties. J. Appl. Phys., 2001, vol. 89, no. 10, pp. 5243-5275.
    • (2001) J. Appl. Phys. , vol.89 , Issue.10 , pp. 5243-5275
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 8
    • 36449002425 scopus 로고
    • Extended X-ray absorption fine structure analysis of the difference in local structure of tantalum oxide capacitor films produced by various annealing methods
    • Kimura, H., Mizuki, J., Kamiyama, S., and Suzuki, H., Extended X-ray Absorption Fine Structure Analysis of the Difference in Local Structure of Tantalum Oxide Capacitor Films Produced by Various Annealing Methods, Appl. Phys. Lett., 1995, vol. 66, no. 17, pp. 2209-2211.
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.17 , pp. 2209-2211
    • Kimura, H.1    Mizuki, J.2    Kamiyama, S.3    Suzuki, H.4
  • 11
    • 33847596250 scopus 로고
    • Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, IaP, InAs, and InSb from 1.5 to 0.6 eV
    • Aspnes, D.E. and Studna, A.A., Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, IaP, InAs, and InSb from 1.5 to 0.6 eV, Phys. Rev. B, 1983, vol. 27, no. 2, pp. 985-1009.
    • (1983) Phys. Rev. B , vol.27 , Issue.2 , pp. 985-1009
    • Aspnes, D.E.1    Studna, A.A.2
  • 12
    • 0021385709 scopus 로고
    • Unambiguous determination of thickness and dielectric function of thin films by spectroscopic ellipsometry
    • Arwin, H. and Aspnes, D.E., Unambiguous Determination of Thickness and Dielectric Function of Thin Films by Spectroscopic Ellipsometry, Thin Solid Films, 1984, vol. 113, no. 2, pp. 101-113.
    • (1984) Thin Solid Films , vol.113 , Issue.2 , pp. 101-113
    • Arwin, H.1    Aspnes, D.E.2
  • 14
    • 84975598381 scopus 로고
    • Effect of oxygen content on the optical properties of tantalum oxide film deposited by ion-beam sputtering
    • Demiryont, H., Sites, J.R., and Geib, K., Effect of Oxygen Content on the Optical Properties of Tantalum Oxide Film Deposited by Ion-Beam Sputtering, Appl. Opt., 1985, vol. 24, pp. 490-495.
    • (1985) Appl. Opt. , vol.24 , pp. 490-495
    • Demiryont, H.1    Sites, J.R.2    Geib, K.3
  • 15
    • 0032613776 scopus 로고    scopus 로고
    • 5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications
    • 5-Silicon Capacitors for Very Large Scale Integration Metal-Oxide-Semiconductor Gate Oxide Applications, J. Appl. Phys., 1999, vol. 85, pp. 4087-4090.
    • (1999) J. Appl. Phys. , vol.85 , pp. 4087-4090
    • Lai, B.C.1    Kung, N.2    Lee, J.Y.3
  • 16
    • 0034510746 scopus 로고    scopus 로고
    • Photo-deposition of tantalum pentoxide film using 222 nm excimer lamps
    • Zhang, J.Y., Hoop, B., Geretovszky, Z., and Boyd, I.W., Photo-Deposition of Tantalum Pentoxide Film Using 222 nm Excimer Lamps, Appl Surf. Sci., 2000, vol. 168, pp. 307-311.
    • (2000) Appl Surf. Sci. , vol.168 , pp. 307-311
    • Zhang, J.Y.1    Hoop, B.2    Geretovszky, Z.3    Boyd, I.W.4
  • 17
    • 0034187380 scopus 로고    scopus 로고
    • Band offsets of wide Band-gap oxide and implications for future electronic devices
    • Robertson, J., Band Offsets of Wide Band-Gap Oxide and Implications for Future Electronic Devices, J. Vac. Sci. Technol., B, 2000, vol. 18, no. 3, pp. 1785-1791.
    • (2000) J. Vac. Sci. Technol., B , vol.18 , Issue.3 , pp. 1785-1791
    • Robertson, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.