-
1
-
-
0001539014
-
5 films
-
5 Films, J. Vac. Sci. Technol., 1982, vol. 21, no. 4, pp. 1043-1045.
-
(1982)
J. Vac. Sci. Technol.
, vol.21
, Issue.4
, pp. 1043-1045
-
-
Rubio, F.1
Albella, J.M.2
Denis, J.3
Martyinez-Duart, J.M.4
-
2
-
-
5444243919
-
2 mixtures
-
2 Mixtures, Thin Solid Films, 1975, vol. 30, no. 2, pp. 377-381.
-
(1975)
Thin Solid Films
, vol.30
, Issue.2
, pp. 377-381
-
-
Ingrey, S.J.1
Westwood, W.D.2
Maclaurin, B.K.3
-
3
-
-
0032606526
-
5 thin films for dynamic random access memory applications
-
5 Thin Films for Dynamic Random Access Memory Applications, J. Appl. Phys., 1999. vol. 86, no. 2, pp. 871-880.
-
(1999)
J. Appl. Phys.
, vol.86
, Issue.2
, pp. 871-880
-
-
Joshi, P.C.1
Cole, M.W.2
-
4
-
-
0036139653
-
5 films for embedded dynamic random access memory applications
-
5 Films for Embedded Dynamic Random Access Memory Applications, J. Appl. Phys., 2002, vol. 92, no. 1, pp. 308-316.
-
(2002)
J. Appl. Phys.
, vol.92
, Issue.1
, pp. 308-316
-
-
Chu, K.1
Chang, J.P.2
Steigerwald, M.L.3
Fleming, R.M.4
Opila, R.L.5
Lang, D.V.6
Van Dover, R.B.7
Jones, C.D.8
-
5
-
-
0024960334
-
5gates of pH-sensitive devices: Comparative spectroscopic and electrical studies
-
5Gates of pH-Sensitive Devices: Comparative Spectroscopic and Electrical Studies, Sens. Actuators, 1989. vol. 17, no. 1, pp. 195-202.
-
(1989)
Sens. Actuators
, vol.17
, Issue.1
, pp. 195-202
-
-
Gimmer, P.1
Gompf, B.2
Schmeisser, D.3
Wiemhofer, R.D.4
Göpel, W.5
-
6
-
-
0035872897
-
High-k gate dielectrics: Current status and materials properties
-
Wilk, G.D., Wallace, R.M., and Anthony, J.M., High-k Gate Dielectrics: Current Status and Materials Properties. J. Appl. Phys., 2001, vol. 89, no. 10, pp. 5243-5275.
-
(2001)
J. Appl. Phys.
, vol.89
, Issue.10
, pp. 5243-5275
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
7
-
-
5444268179
-
LEF-801 mikroskan automatic laser ellipsometer
-
St Petersburg
-
Aul'chenko, N.A., Ladygin, V.I., Rykhlitskii, S.V., et al., LEF-801 Mikroskan Automatic Laser Ellipsometer, in Lazery i sovremennoe priborostroenie: materialy nauchno-tekhnicheskoi konferentsii (Proc. Conf. on Lasers and Advanced Instrumentation), St Petersburg, 1991, p. 240.
-
(1991)
Lazery i Sovremennoe Priborostroenie: Materialy Nauchno-tekhnicheskoi Konferentsii (Proc. Conf. on Lasers and Advanced Instrumentation)
, pp. 240
-
-
Aul'chenko, N.A.1
Ladygin, V.I.2
Rykhlitskii, S.V.3
-
8
-
-
36449002425
-
Extended X-ray absorption fine structure analysis of the difference in local structure of tantalum oxide capacitor films produced by various annealing methods
-
Kimura, H., Mizuki, J., Kamiyama, S., and Suzuki, H., Extended X-ray Absorption Fine Structure Analysis of the Difference in Local Structure of Tantalum Oxide Capacitor Films Produced by Various Annealing Methods, Appl. Phys. Lett., 1995, vol. 66, no. 17, pp. 2209-2211.
-
(1995)
Appl. Phys. Lett.
, vol.66
, Issue.17
, pp. 2209-2211
-
-
Kimura, H.1
Mizuki, J.2
Kamiyama, S.3
Suzuki, H.4
-
11
-
-
33847596250
-
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, IaP, InAs, and InSb from 1.5 to 0.6 eV
-
Aspnes, D.E. and Studna, A.A., Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, IaP, InAs, and InSb from 1.5 to 0.6 eV, Phys. Rev. B, 1983, vol. 27, no. 2, pp. 985-1009.
-
(1983)
Phys. Rev. B
, vol.27
, Issue.2
, pp. 985-1009
-
-
Aspnes, D.E.1
Studna, A.A.2
-
12
-
-
0021385709
-
Unambiguous determination of thickness and dielectric function of thin films by spectroscopic ellipsometry
-
Arwin, H. and Aspnes, D.E., Unambiguous Determination of Thickness and Dielectric Function of Thin Films by Spectroscopic Ellipsometry, Thin Solid Films, 1984, vol. 113, no. 2, pp. 101-113.
-
(1984)
Thin Solid Films
, vol.113
, Issue.2
, pp. 101-113
-
-
Arwin, H.1
Aspnes, D.E.2
-
14
-
-
84975598381
-
Effect of oxygen content on the optical properties of tantalum oxide film deposited by ion-beam sputtering
-
Demiryont, H., Sites, J.R., and Geib, K., Effect of Oxygen Content on the Optical Properties of Tantalum Oxide Film Deposited by Ion-Beam Sputtering, Appl. Opt., 1985, vol. 24, pp. 490-495.
-
(1985)
Appl. Opt.
, vol.24
, pp. 490-495
-
-
Demiryont, H.1
Sites, J.R.2
Geib, K.3
-
15
-
-
0032613776
-
5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications
-
5-Silicon Capacitors for Very Large Scale Integration Metal-Oxide-Semiconductor Gate Oxide Applications, J. Appl. Phys., 1999, vol. 85, pp. 4087-4090.
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 4087-4090
-
-
Lai, B.C.1
Kung, N.2
Lee, J.Y.3
-
16
-
-
0034510746
-
Photo-deposition of tantalum pentoxide film using 222 nm excimer lamps
-
Zhang, J.Y., Hoop, B., Geretovszky, Z., and Boyd, I.W., Photo-Deposition of Tantalum Pentoxide Film Using 222 nm Excimer Lamps, Appl Surf. Sci., 2000, vol. 168, pp. 307-311.
-
(2000)
Appl Surf. Sci.
, vol.168
, pp. 307-311
-
-
Zhang, J.Y.1
Hoop, B.2
Geretovszky, Z.3
Boyd, I.W.4
-
17
-
-
0034187380
-
Band offsets of wide Band-gap oxide and implications for future electronic devices
-
Robertson, J., Band Offsets of Wide Band-Gap Oxide and Implications for Future Electronic Devices, J. Vac. Sci. Technol., B, 2000, vol. 18, no. 3, pp. 1785-1791.
-
(2000)
J. Vac. Sci. Technol., B
, vol.18
, Issue.3
, pp. 1785-1791
-
-
Robertson, J.1
|