Depth profile characterization of low-energy B + - and Ge + -ion-implanted Si

Applied Surface Science

Volumn 211, Issue 1-4, 2003, Pages 270-279

  Karmakov, Iordan ^a   Chakarov, Ivan ^b   Konova, Anka ^a  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b Silvaco Data Systems Inc   (United States)

Author keywords

Damage depth profile; Ion implantation; Low energy B and Ge ions; Optical method; Simulation; Spectroellipsometry

Indexed keywords

BORON; ELASTICITY; ELLIPSOMETRY; GERMANIUM; ION IMPLANTATION; STRAIN;

SPECTROELLIPSOMETRY;

SEMICONDUCTING SILICON;

EID: 0038333113     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00251-4     Document Type: Article

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