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Volumn 106, Issue 2, 2009, Pages

Modification of the valence band structures of polar and nonpolar plane wurtzite-GaN by anisotropic strain

(10) Fu, Deyi a Zhang, Rong a Wang, Baigeng a Zhang, Zeng a Liu, Bin a Xie, Zili a Xiu, Xiangqian a Lu, Hai a Zheng, Youdou a Edwards, Gerard b

a NANJING UNIVERSITY (China)

b UNIVERSITY OF BOLTON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN; BAND DEFORMATION; BAND EDGE; DEFORMATION POTENTIAL; EFFECTIVE MASS; EXCITONIC TRANSITION; GAN EPILAYERS; HAMILTONIAN APPROACH; HOLE EFFECTIVE MASS; IN-PLANE ANISOTROPY; INTERBAND; LASER DIODE DESIGNS; LINEAR POLARIZATION; NON-POLAR; NUMERICAL CALCULATION; RESIDUAL STRAINS; SELECTION RULES; SPIN-ORBIT COUPLING EFFECTS; STRAIN STATE; SUB-BANDS; WURTZITES;

ANISOTROPY; BAND STRUCTURE; DEFORMATION; EXCITONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT TRANSMISSION; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; ZINC SULFIDE;

OPTICAL PROPERTIES;

EID: 68249159736 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3174436 Document Type: Article

Times cited : (25)

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