Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 299-303

  Behn, Udo ^a,b   Misra, Pranob ^b   Grahn, Holger T ^b   Imer, Bilge ^c   Nakamura, Shuji ^c   DenBaars, Steven P ^c   Speck, James S ^c  

^a University of Applied Sciences Schmalkalden   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGIES; ELECTRONIC BAND STRUCTURE; GAN FILMS; PHOTOREFLECTANCE SPECTROSCOPY;

ANISOTROPY; BAND STRUCTURE; FILM GROWTH; GALLIUM NITRIDE; LIGHT POLARIZATION; SPECTROSCOPIC ANALYSIS;

THIN FILMS;

EID: 33846404116     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673539     Document Type: Conference Paper

References (12)

1. G. L. Sir and G. E. Pikus, Symmetry and Strain Induced Effects in Semiconductors (Wiley, New York, 1974).
2. M. Suzuki, T. Uenoyama, and A. Yanase, Phys. Rev. B 52, 8132 (1995).
3. W. Shan et al., Phys. Rev. B 54, 13460 (1996).
4. S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002).
5. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
6. A. Alemu, B. Gil, M. Julier, and S. Nakamura, Phys. Rev. B 57, 3761 (1998).
7. M. Julier, J. Campo, B. Gil, J. P. Lascaray, and S. Nakamura, Phys. Rev. B 57, R6791 (1998).
8. P. Misra et al., Appl. Phys. Lett. 88, 161920 (2006).
9. P. Waltereit et al., J. Cryst. Growth 218, 143 (2000).
10. Y. J. Sun, O. Brandt, and K. H. Ploog, J. Vac. Sci. Technol. B 21, 1350 (2003).
11. M. D. Craven, S. H. Lim, and F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 469 (2002).
12. M. D. Craven et al., Appl. Phys. Lett. 84, 1281 (2004).