Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2

Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 413-415

  Ghosh, Sandip ^a   Waltereit, P ^a   Brandt, O ^a   Grahn, H T ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL COMPRESSIVE STRAIN; ELECTRIC FIELD VECTORS; ELECTRONIC BAND STRUCTURE; GAN FILM; M-PLANE; PHOTOREFLECTANCE SPECTRA; POLARIZATION DEPENDENCE; PROBE LIGHT; REFLECTANCE MEASUREMENTS; SPECTROSCOPIC STUDIES; WURTZITE GAN;

ENERGY GAP; POLARIZATION; REFLECTION; REFRACTIVE INDEX; SPECTROSCOPIC ANALYSIS; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 79956053504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1434306     Document Type: Article

References (27)

1. V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, Phys. Rev. B 60, 8849 (1999); prb PRBMDO 0163-1829
2. F. Bernardini, V. Fiorentini, and D. Vanderbilt, 63, 193201 (2001). prb PRBMDO 0163-1829
3. T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 38, L914 (1999). jjc JAPLD8 0021-4922
4. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 406, 865 (2000). nat NATUAS 0028-0836
5. P. Waltereit, O. Brandt, M. Ramsteiner, R. Uecker, P. Reiche, and K. H. Ploog, J. Cryst. Growth 218, 143 (2000). jcr JCRGAE 0022-0248
6. M. Born and E. Wolf, Principles of Optics (Pergamon, Oxford, 1965).
7. Landolt-Börnstein, Series III, edited by R. Allmann, W. Pies, and W. Weiss (Springer, Berlin, 1980), Vol. 7d2.
8. M. Suzuki, T. Uenoyama, and A. Yanase, Phys. Rev. B 52, 8132 (1995). prb PRBMDO 0163-1829
9. A. J. Fischer, W. Shan, J. J. Song, Y. C. Chang, R. Horning, and B. Goldenberg, Appl. Phys. Lett. 71, 1981 (1997). apl APPLAB 0003-6951
10. A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura, J. Appl. Phys. 81, 417 (1997). jap JAPIAU 0021-8979
11. K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, Appl. Phys. Lett. 70, 987 (1997). apl APPLAB 0003-6951
12. VB=-4.7eV. Other strain-free EBS parameters were taken from Ref. 9.
13. ij denote the elastic constants (after Ref. 26).
14. T. Ohtoshi, A. Niwa, and T. Kuroda, J. Appl. Phys. 82, 1518 (1997). jap JAPIAU 0021-8979
15. K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, Appl. Phys. Lett. 71, 1996 (1997). apl APPLAB 0003-6951
16. H. Y. Zhang, X. H. He, Y. H. Shih, M. Schurman, Z. C. Feng, and R. A. Stall, Appl. Phys. Lett. 69, 2953 (1996). apl APPLAB 0003-6951
17. G. Yu, H. Ishikawa, T. Egawa, T. Soga, J. Watanabe, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys., Part 2 36, L1029 (1997). jjc JAPLD8 0021-4922
18. M. J. Bergmann, U. Özgür, H. C. Casey, Jr., H. O. Everitt, and J. F. Muth, Appl. Phys. Lett. 75, 67 (1999). apl APPLAB 0003-6951
19. R. Goldhahn, S. Shokhovets, J. Scheiner, G. Gobsch, T. S. Cheng, C. T. Foxon, U. Kaiser, G. D. Kipshidze, and W. Richter, Phys. Status Solidi A 177, 107 (2000). psa PSSABA 0031-8965
20. H. Amano, N. Watanabe, N. Koide, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 32, L1000 (1993). jjc JAPLD8 0021-4922
21. U. Tisch, B. Meyler, O. Katz, E. Finkman, and J. Salzman, J. Appl. Phys. 89, 2676 (2001). jap JAPIAU 0021-8979
22. A. S. Barker and M. Ilegems, Phys. Rev. B 7, 743 (1973). prb PRBMDO 0163-1829
23. T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka, J. Appl. Phys. 82, 3528 (1997). jap JAPIAU 0021-8979
24. J. Chen, Z. H. Levine, and J. W. Wilkins, Appl. Phys. Lett. 66, 1129 (1995). apl APPLAB 0003-6951
25. K. Karch, J.-M. Wagner, and F. Bechstedt, Phys. Rev. B 57, 7043 (1998). prb PRBMDO 0163-1829
26. G. L. Bir and G. E. Pikus, Symmetry and Strain Induced Eeffects in Semiconductors (Wiley, New York, 1974).
27. A. Polian, M. Grimsditch, and I. Grzegory, J. Appl. Phys. 79, 3343 (1996). jap JAPIAU 0021-8979