Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Ghosh, Sandip ^a,d   Misra, Pranob ^a   Grahn, H T ^a   Imer, Bilge ^b,c   Nakamura, Shuji ^b,c   DenBaars, S P ^b,c   Speck, J S ^b,c  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b University of California   (United States)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN; PHOTOREFLECTANCE SPECTROSCOPY (PR); RADIATIVE EFFICIENCY; VAPOR-PHASE EPITAXY;

ANISOTROPY; CRYSTAL STRUCTURE; ENERGY GAP; ENERGY TRANSFER; LIGHT POLARIZATION; PIEZOELECTRICITY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; THIN FILMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 23844451539     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1968424     Document Type: Article

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