Two-step growth of m-plane GaN epilayer on LiAlO2 (1 0 0) by metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 228-231

  Liu, Chengxiang ^a   Xie, Zili ^a   Han, Ping ^a   Liu, Bin ^a   Li, Liang ^a   Zou, Jun ^b   Zhou, Shengming ^b   Bai, Li Hui ^c   Chen, Zhang Hai ^c   Zhang, Rong ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^c FUDAN UNIVERSITY   (China)

Author keywords

A1. LiAlO2; A1. Nitridation; A3. MOCVD; B2. c plane GaN; B2. m plane GaN

Indexed keywords

GROWTH (MATERIALS); LITHIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SUBSTRATES; X RAY DIFFRACTION;

C-PLANE GAN; LIALO2; M-PLANE GAN; NITRIDATION;

GALLIUM NITRIDE;

EID: 33846534743     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.021     Document Type: Article

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