Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100)

Applied Physics Letters

Volumn 92, Issue 26, 2008, Pages

  Liu, B ^a   Zhang, R ^a   Xie, Z L ^a   Kong, J Y ^a   Yao, J ^a   Liu, Q J ^a   Zhang, Z ^a   Fu, D Y ^a   Xiu, X Q ^a   Chen, P ^a   Han, P ^a   Shi, Y ^a   Zheng, Y D ^a   Zhou, S M ^b   Edwards, G ^c  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^c UNIVERSITY OF BOLTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE;

CRYSTALLOGRAPHIC PROPERTIES; GAN FILMS; M PLANE;

SEMICONDUCTING GALLIUM;

EID: 46649093988     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2951618     Document Type: Article

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