The control of two-dimensional-electron-gas density and mobility in AlGaN/GaN heterostructures with Schottky gate

Materials Science and Engineering C

Volumn 26, Issue 5-7, 2006, Pages 898-901

  Asgari, A ^a   Kalafi, M ^a  

^a UNIVERSITY OF TABRIZ   (Iran)

Author keywords

AlGaN GaN heterostructure; Gate Voltage; Mobility

Indexed keywords

DENSITY (SPECIFIC GRAVITY); HETEROJUNCTIONS; MESFET DEVICES; NUMERICAL ANALYSIS; POISSON EQUATION; SEMICONDUCTING GALLIUM COMPOUNDS;

ALGAN/GAN HETEROSTRUCTURE; GATE VOLTAGE; INTER-SUB-BAND SCATTERING; MOBILITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33646823463     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2005.09.002     Document Type: Article

References (9)

1. Mishra U.K., Wu Y.F., Keller B.P., Keller S., and DenBaars S.P. IEEE Trans. Microwave Theor. Tech. 46 (1998) 756
2. Gaska R., Yang J.W., Osinski A., Chen Q., Kahn M.A., Orlov A.O., Snider L., and Shur M.S. Appl. Phys. Lett. 72 (1998) 707
3. Hsu L., and Walukiewicz W. J. Appl. Phys. 89 (2001) 1783
4. Kalafi M., and Asgari A. Physica, E, Low-Dimens. Syst. Nanostruct. 19 (2003) 321
5. Asgari, Kalafi M., and Faraone L. Physica, E, Low-Dimens. Syst. Nanostruct. 25 (2005) 431
6. Kalafi M., and Asgari A. Phys. Lett., A 309 (2003) 306
7. Asgari, Kalafi M., and Faraone L. J. Appl. Phys. 95 (2004) 1185
8. Dang X.Z., Asbeck P.M., Yu E.T., Sullivan G.J., Chen M.Y., McDermott B.T., Boutros K.S., and Redwing J.M. Appl. Phys. Lett. 74 (1999) 3890
9. Garrido J.A., Rojas J.L.S., Jimenez A., Munoz E., Omnis F., and Gibart P. Appl. Phys. Lett. 75 (1999) 2407