Investigation of temperature dependent microwave performance of AIGaN/GaN MISHFETs for high power wireless applications

2008 International Conference of Recent Advances in Microwave Theory and Applications, MICROWAVE 2008

Volumn , Issue , 2008, Pages 66-68

  Aggarwal, Ruchika ^a   Agrawal, Anju ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

AIGaN GaN MISHFET, cut off frequency; Saturation drain current; Saturation output power; Threshold voltage; Wide band gap semiconductor

Indexed keywords

CUTOFF FREQUENCY; ELECTRIC CONDUCTIVITY; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH TEMPERATURE APPLICATIONS; METAL INSULATOR BOUNDARIES; MICROWAVES; MIS DEVICES; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

AIGAN/GAN MISHFET, CUT-OFF FREQUENCY; ALGAN/GAN; ANALYTICAL MODELS; ELECTRICAL CHARACTERISTICS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HIGH TEMPERATURES; HIGH-POWER; METAL - INSULATOR - SEMICONDUCTORS; MICROWAVE PERFORMANCE; SATURATION DRAIN CURRENT; SATURATION OUTPUT POWER; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES; TEMPERATURE-DEPENDENT MATERIAL PROPERTIES; WIDE BAND GAP SEMICONDUCTOR;

DRAIN CURRENT;

EID: 63049110182     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/AMTA.2008.4763139     Document Type: Conference Paper

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