Nonvolatile static random access memory using magnetic tunnel junctions with current-induced magnetization switching architecture

Japanese Journal of Applied Physics

Volumn 48, Issue 4, 2009, Pages

  Yamamoto, Shuu'ichirou ^a,b   Sugahara, Satoshi ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-INDUCED MAGNETIZATION SWITCHING; KEY COMPONENT; LOGIC SYSTEMS; MAGNETIC TUNNEL JUNCTION; NON-VOLATILE; POWER-GATING; SRAM CELL; STATIC RANDOM ACCESS MEMORY; STATIC-POWER DISSIPATION; STORAGE NODES; TUNNELING MAGNETORESISTANCE;

BIOINFORMATICS; CELL MEMBRANES; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HEAT RADIATION; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MAGNETS; NONVOLATILE STORAGE; SEMICONDUCTOR JUNCTIONS; STATIC RANDOM ACCESS STORAGE; TUNNELS; WAVEGUIDE JUNCTIONS; WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 67849103654     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.043001     Document Type: Article

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