NV-SRAM: A nonvolatile SRAM with backup ferroelectric capacitors

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 3, 2001, Pages 522-527

  Miwa, T ^a   Yamada, J ^a   Koike, H ^a   Toyoshima, H ^a   Amanuma, K ^a   Kobayashi, S ^a   Tatsumi, T ^a   Maejima, Y ^a   Hada, H ^a   Kunio, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Embedded memory; Ferroelectric memory; SRAM

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CAPACITORS; FERROELECTRIC DEVICES;

FERROELECTRIC CAPACITORS; NONVOLATILE STATIC RANDOM ACCESS STORAGE (NV-SRAM);

STATIC RANDOM ACCESS STORAGE;

EID: 0035273822     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.910492     Document Type: Article

References (10)

1. A 0.9-V embedded ferroelectric memory for microcontrollers
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5. A single 5 V supply nonvolatile static RAM
6. A ferroelectric nonvolatile memory
7. Capacitor-on-metal/via-stacked-plug (CMVP) memory cell for 0.25 μm CMOS embedded FeRAM
8. 0.25 μm FeRAM with CMVP (capacitor-on-metal/via-stacked-plug) memory cell