Evaluation of spin-transfer switching in CoFeB/MgO/CoFeB magnetic tunnel junctions

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 37-41, 2005, Pages

  Kubota, Hitoshi ^a   Fukushima, Akio ^a   Ootani, Yuichi ^a   Yuasa, Shinji ^a,b   Ando, Koji ^a   Maehara, Hiroki ^c   Tsunekawa, Koji ^c   Djayaprawira, David D ^c   Watanabe, Naoki ^c   Suzuki, Yoshishige ^a,d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Canon ANELVA Technix Corporation   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

Magnetic tunnel junction; Magnetoresistive random access memory; MgO; Spin transfer switching; Switching current density; Tunnel magnetoresistance

Indexed keywords

COBALT COMPOUNDS; GIANT MAGNETORESISTANCE; MAGNESIA; MAGNETIC MATERIALS; MAGNETIZATION; SWITCHING CIRCUITS;

MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE RANDOM ACCESS MEMORY; SPIN-TRANSFER SWITCHING; SWITCHING CURRENT DENSITY;

TUNNEL JUNCTIONS;

EID: 31844442524     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1237     Document Type: Article

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