Spin dependent tunneling devices fabricated for magnetic random access memory applications using latching mode

Journal of Applied Physics

Volumn 87, Issue 9 III, 2000, Pages 6385-6387

  Wang, D ^a   Tondra, M ^a   Pohm, A V ^a   Nordman, C ^a   Anderson, J ^a   Daughton, J M ^a   Black, W C ^b  

^a NVE CORPORATION   (United States)

^b IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038236059     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372714     Document Type: Article

References (8)

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