Structure, materials and shape optimization of magnetic tunnel junction devices: Spin-transfer switching current reduction for future magnetoresistive random access memory application

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 3835-3841

  Huai, Yiming ^a   Apalkov, Dmytro ^a   Diao, Zhitao ^a   Ding, Yunfei ^a   Panchula, Alex ^a   Pakala, Mahendra ^a   Wang, Lien Chang ^a   Chen, Eugene ^a  

^a Grandis Inc   (United States)

Author keywords

Current induced magnetization switching; Magnetic tunnel junction; Magneto resistive random access memory; MgO barrier; Spin transfer torque

Indexed keywords

CURRENT DENSITY; ELECTRIC SWITCHES; MAGNETIC PROPERTIES; MAGNETORESISTANCE; OPTIMIZATION;

CURRENT INDUCED MAGNETIZATION SWITCHING; MAGNETIC TUNNEL JUNCTION; MAGNETO-RESISTIVE RANDOM ACCESS MEMORY; MGO BARRIER; SPIN TRANSFER TORQUE;

SEMICONDUCTOR JUNCTIONS;

EID: 33646865491     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3835     Document Type: Article

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