Gain and recombination in quantum dot lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 3, 2009, Pages 808-818

  Blood, Peter ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

Optical gain; Quantum dots; Recombination; Semiconductor lasers

Indexed keywords

COMPUTER CALCULATION; DOT SYSTEM; INAS; INAS QUANTUM WELL; K-SELECTION; LOCATION SELECTION; MATERIAL PROPERTY; QUANTUM DOT ENSEMBLE; QUANTUM DOT LASER STRUCTURES; QUANTUM DOT LASERS; QUANTUM DOTS; QUANTUM WELL SYSTEMS; RECOMBINATION; RECOMBINATION RATE; TEMPERATURE SENSITIVITY; THRESHOLD CURRENTS;

INDIUM ARSENIDE; LASERS; OPTICAL GAIN; OPTICAL WAVEGUIDES; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 67650915050     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.2011998     Document Type: Article

References (69)

1. R. Dingle and C. H. Henry, "Quantum effects in heterstructure lasers," U.S. Patent 3 982 207, Sep. 21, 1976.
2. Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, 1982.
3. M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and threshold of three-dimensional quantum box lasers," IEEE J. Quantum Electron., vol. QE-22, no. 9, pp. 1915-1921, Sep. 1986.
4. o injection laser emission from In(Ga)As quantum dots," Electron. Lett., vol. 30, pp. 1416-1417, 1994.
5. L. Brus, "Zero dimensional excitons in semiconductor clusters," IEEE J. Quantum Electron., vol. QE-22, no. 9, pp. 1909-1914, Sep. 1986.
6. T. Sargent and S. Hoogland. (2006). [Online]. Available: http://www. engineering.utoronto.ca/news/news-4192006.htm
7. D. J. Mowbray and M. S. Skolnick, "New physics and devices based on self-assembled semiconductor quantum dots," J. Phys. D, Appl. Phys., vol. 38, pp. 2059-2076, 2005.
8. P. Bhattacharya and Z. Mi, "Quantum dot optoelectronic devices," Proc. IEEE, vol. 95, no. 9, pp. 1723-1740, Sep. 2007.
9. M. Sugawara, Ed., Self Assembled InGaAs/GaAs Quantum Dots, Semiconductors and Semimetals. vol. 60, San Diego, CA: Academic, 1999.
10. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Het-erostructures. Chichester, U.K.: Wiley, 1999.
11. G. Park, O. B. Shchekin, D. Huffaker, and D. Deppe, "Low threshold oxide confined 1.3 μm quantum dot laser," IEEE Photon. Technol. Lett., vol. 13, no. 3, pp. 230-232, Mar. 2000.
12. Ch. Ribbat, R. L. Sellin, I. Kaiander, P. Hopfer, N. N. Ledentzov, D. Bimberg, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, and M. V. Maximov, "Complete suppression of filamentation and superior beam quality in quantum dot lasers," Appl. Phys. Lett., vol. 82, pp. 952-954, 2003.
13. A. R. Kovsh, A. E. Zhukov, D. A. Livshits, A. Y. Egorov, V. M. Ustinov, M. V. Maximov, Y. G. Musikhin, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg, "3.5 W CW operation of quantum dot laser," Electron. Lett., vol. 35, pp. 1161-1163, 1999.
14. E. U. Rafailov, M. A. Cataluna, and W. Sibbett, "Mode locked quantum dot lasers," Nat. Photon., vol. 1, pp. 395-401, Jul. 2007.
15. M. Kuntz, G. Fiol, M. Laemmlin, C. Meuer, and D. Bimberg, "Highspeed mode-locked quantum dot lasers and optical amplifiers," Proc. IEEE, vol. 95, no. 9, pp. 1767-1778, Sep. 2007.
16. H. Saito, K. Nishi, I. Ogura, S. Sugou, and Y. Sugimoto, "Room temperature lasing operation of a quantum dot vertical cavity surface emitting laser," Appl. Phys. Lett., vol. 69, pp. 3140-3142, 1996.
17. D. L. Huffaker, O. Baklenov, L. A. Graham, B. G. Streerman, and D. G. Deppe, "Quantum dot vertical cavity surface emitting laser with a dielectric aperture," Appl. Phys. Lett., vol. 70, pp. 2356-2358, 1997.
18. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
19. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995.
20. L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, "Optical characteristics of 1.24 μm InAs quantum dot laser diodes," IEEE Photon. Technol. Lett., vol. 11, no. 8, pp. 931-933, Aug. 1999.
21. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, "The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures," IEEE J. Quantum Electron., vol. 36, no. 11, pp. 1272-1279, Nov. 2000.
22. K. Kim, T. B. Norris, S. Ghosh, J. Singh, and P. Bhattacharya, "Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots," Appl. Phys. Lett., vol. 82, pp. 1959-1961, 2003.
23. S.W.Osborne,P.Blood,P. M. Smowton,Y. C.Yin,A. Stimtz,D.Huffaker, and L. F. Lester, "Optical absorption cross section of quantum dots," J. Phys. C, Condens. Matter, vol. 16, pp. S3749-S3756, 2004.
24. D. G. Deppe, D. L. Huffaker, S. Csutak, Z. Zou, G. Park, and O. B. Shchekin, "Spontaneous emission and threshold characteristics of 1.3-mu m InGaAs-GaAs quantum-dot GaAs-based lasers," IEEE J. Quantum Electron., vol. 35, no. 8, pp. 1238-1246, Aug. 1999.
25. G. Park, O. B. Shchekin, and D. Deppe, "Temperature dependence of gain saturation in multilevel quantum dot lasers," IEEE J. Quantum Electron., vol. 36, no. 9, pp. 1065-1071, Sep. 2000.
26. A. Wojs, P. Hawrylak, S. Farard, and L. Janak, "Electronic structure and magneto-optics of self-assembled dots," Phys. Rev. B, Condens. Matter, vol. 54, pp. 5604-5608, 1996.
27. O. Stier, M. Grundmann, and D. Bimberg, "Electronic and optical properties of strained quantum dots modeled by 8-band k.p theory," Phys. Rev. B, Condens. Matter, vol. 59, pp. 5688-5701, 1999.
28. A. J. Williamson, W. L. Wang, and A. Zunger, "Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots," Phys. Rev. B, Condens. Matter, vol. 62, pp. 12 963-12 977, 2000.
29. A. D. Andreev and E. P. O'Reilly, "Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters," Appl. Phys. Lett., vol. 87, pp. 213 106-1-213 106-3, 2005.
30. A. V. Uskov, Y. Boucher, J. L. Bihan, and J. McInerney, "Theory of a self assembled quantum dot semiconductor laser with Auger carrier capture: Quantum efficiency and non-linear gain," Appl. Phys. Lett., vol. 73, pp. 1499-1501, 1998.
31. H. D. Summers, J. D. Thomson, P. M. Smowton, P. Blood, and M. Hopkinson, "Thermodynamic balance in quantum dot lasers," Semicond. Sci. Technol., vol. 16, pp. 140-143, 2001.
32. M. Grundmann and D. Bimberg, "Theory of random population of quantum dots," Phys. Rev. B, Condens. Matter, vol. 55, pp. 9740-9745, 1997.
33. H. J. Pask, "Model for localised recombination in quantum dots," Ph.D. thesis, Cardiff Univ., Cardiff, U.K., 2006.
34. R. H. Dicke and J. P. Wittke, Introduction to Quantum Mechanics. Reading, MA: Addison-Wesley, 1963.
35. R. Loudon, The Quantum Theory of Light. London, U.K.: Oxford Univ. Press, 2000.
36. A. E. Siegman, Lasers. Mill Valley, CA: Univ. Science Books, 1986.
37. P. Borri, W. Langbein, S. Schneider, U. Woggon, R. L. Sellin, D. Ouyang, andD. Bimberg, "Exciton relaxation and dephasingin quantum-dot amplifiers from room to cryogenic temperature," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 5, pp. 984-991, Sep./Oct. 2002.
38. W. W. Chow, P. M. Smowton, P. Blood, A. Girndt, F. Jahnke, and S. W. Koch, "Comparison of experimental and theoretical GaInP quantum well gain spectra," Appl. Phys. Lett., vol. 71, pp. 157-159, 1997.
39. W. W. Chow and S. W. Koch, Semiconductor Laser Fundamentals. Berlin, Germany: Springer-Verlag, 1999, ch. 4.
40. P. Blood, "On the dimensionality of optical absorption, gain and recombination in quantum confined structures," IEEE J. Quantum Electron., vol. 36, no. 3, pp. 354-362, Mar. 2000.
41. P. G. Eliseev, H. Li, G. T. Liu, A. Stintz, T. C. Newell, L. F. Lester, and K. J. Malloy, "Ground state emission and gain in ultra-low threshold InAs-InGaAs quantum dot lasers," IEEE J. Sel. Topics Quantum Electron., vol. 7, no. 2, pp. 135-142, Mar./Apr. 2001.
42. S. W. Osborne, P. Blood, P. M. Smowton, J. Lutti, Y. C. Xin, A. Stintz, D. Huffaker, and L. F. Lester, "State filling in InAs quantum-dot laser structures," IEEE J. Quantum Electron., vol. 40, no. 12, pp. 1639-1645, Dec. 2001.
43. D. R. Matthews, H. D. Summers, P. M. Smowton, and M. Hopkinson, "Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers," Appl. Phys. Lett., vol. 81, pp. 4904-4906, 2002.
44. H. J. Pask, H. D. Summers, and P. Blood, "Light-current characteristics of quantum dots with localized recombination," Appl. Phys. Lett., vol. 87, pp. 083 109-1-083 109-3, 2005.
45. I. P. Marko, A. D. Andreev, A. R. Adams, R. Krebs, J. P. Reithmaier, and A. Forchel, "The roleof Auger recombination in InAs 1.3 μm quantum dot lasers investigated using high hydrostatic pressure," IEEE J. Sel. Topics Quantum Electron., vol. 9, no. 5, pp. 1300-1307, Sep./Oct. 2003.
46. P. Blood, H. J. Pask, H. D. Summers, and I. Sandall, "Localised Auger recombinationinquantum dot lasers," IEEE J. Quantum Electron., vol. 43, no. 12, pp. 1140-1146, Dec. 2007.
47. A. E. Zhukov, A. R. Kovsh, V. N. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatul'nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop'ev, D. Bimberg, and Zh. I. Alferov, "Gain characteristics of quantum dot injection lasers," Semicond. Sci. Technol., vol. 14, pp. 118-123, 1999.
48. P. M. Smowton, E. Hermann, Y. Ning, H. D. Summers, and P. Blood, "Optical mode loss and gain of multiple layer quantum dot lasers," Appl. Phys. Lett., vol. 78, pp. 2629-2631, 2001.
49. G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, "Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic oscillator energy levels," Appl. Phys. Lett., vol. 73, pp. 3351- 3353, 1998.
50. O. B. Shchekin, G. Park, D. Huffaker, Q. Mo, and D. G. Deppe, "Low threshold continuous wave two-stack quantum dot laser with reduced temperature sensitivity," IEEE Photon. Technol. Lett., vol. 12, no. 9, pp. 1120-1122, Sep. 2000.
51. 0 1.3 μm InAs quantum dot lasers due to p-type modulation doping of the active region," IEEE Photon. Technol. Lett., vol. 14, no. 9, pp. 1231-1233, Sep. 2002.
52. D. G. Deppe, S. Freisem, G. Ozgur, K. Shaviritranuruk, and H. Chen, "Very low threshold current density continuous wave quantum dot laser diode," presented at the Int. Semicond. Laser Conf., Sorrento Italy, 2008.
53. O. B. Shchekin and D. G. Deppe, "The role of p-type doping and the density of states on the modulation response of quantum dot lasers," Appl. Phys. Lett., vol. 80, pp. 2758-2760, 2002.
54. 0 = 161 K from 0 to 80°C," Appl. Phys. Lett., vol. 80, pp. 3277-3279, 2002.
55. P. M. Smowton, I. C. Sandall, H. Y. Liu, and M. Hopkinson, "Gain in p-doped quantum dot lasers," J. Appl. Phys., vol. 101, pp. 013 107-1- 013 107-7, 2007.
56. A. E.Zhukov, V. N.Ustinov,A.Y. Egorov,A.R.Kovsh, A. F.Tsatulnokov, N. N. Ledentsov, S. V. Zaitsev, N. Y. Gordeev, P. S. Kop'ev, and Zh. I. Alferov, "Negative characteristic temperature of InGaAs quantum dot injection lasers," Jpn. J. Appl. Phys., vol. 36, pp. 4216-4218, 1997.
57. S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, L. L. Krestnikov, A. V. Kozhukhov, and N. N. Ledentsov, "The role of Auger recombination in the temperature dependent output characteristics of p-doped 1.3 μm quantum dot lasers," Appl. Phys. Lett., vol. 85, pp. 5164- 5166, 2004.
58. I. P. Marko, N. F. Masse, S. J. Sweeney, A. D. Andreev, and A. R. Adams, "Carrier transport and recombination in p-doped and intrinsic InAs/GaAs quantum dot lasers," Appl. Phys. Lett., vol. 87, pp. 211 114-1-211 114-3, 2005.
59. L. V. Asryan and S. Luryi, "Tunneling injection quantum dot laser: Ultra high temperature stability," IEEE J. Quantum Electron., vol. 37, no. 7, pp. 905-910, Jul. 2001.
60. A. A. George, P. M. Smowton, Z. Mi, and P. Bhattacharya, "Long wavelength quantum dot lasers selectively populated using tunnel imjection," Semicond. Sci. Technol., vol. 22, pp. 557-560, 2007.
61. P. Bhattacharya, S. Ghosh, S. Pradhan, J. Singh, Z.-K. Wu, J. Urayama, K. Kim, and T. B. Norris, "Carrier dynamics and high speed modulation properties of tunnel injection InGaAs-GaAs quantum dot lasers," IEEE J. Quantum Electron., vol. 39, no. 8, pp. 952-962, Aug. 2003.
62. G. Sun, R. A. Soref, and J. B. Khurgin, "Reduced threshold current of a quantum dot laser in a short period superlattice of indirect gap," Appl. Phys. Lett., vol. 84, pp. 3861-3863, 2004.
63. A. D. Andreev and E. P. O'Reilly, "Radiative recombination in InAs based quantum dot lasers: Dependence on carrier density and dot parameters," Phys. Status Solidi C, vol. 2, pp. 1374-1378, 2005.
64. L. H. Li, P. Ridha, G. Patriarche, N. Chauvin, and A. Fiore, "Shape engineered epitaxial InGaAs quantum rods for laser applications," Appl. Phys. Lett., vol. 92, pp. 121 102-1-121 102-3, 2008.
65. M. Motyka, G. Sec, K. Ryczko, J. Andrzejewski, J. Misiewicz, L. H. Li, A. Fiore, and G. Patriarche, "Optical and electronic properties of GaAs-based structures with columnar quantum dots," Appl. Phys. Lett., vol. 90, pp. 181 933-1-181 933-3, 2007.
66. H. C. Schneider, W. W. Chow, and S. W. Koch, "Many body effects in the gain spectra of highly excited quantum dot systems," Phys. Rev. B, Condens. Matter, vol. 64, pp. 115 315-115 322, 2001.
67. M.Lorke,W.W.Chow, T.R.Nielsen, J.Seebeck, P.Gartner, andF.Jahnke, "Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots," Phys. Rev. B, Condens. Matter, vol. 74, pp. 035 334-1-035 334-4, 2006.
68. M. Lorke, F. Jahnke, and W. W. Chow, "Excitation dependences of gain and carrier-induced refractive index change in quantum dot lasers," Appl. Phys. Lett., vol. 90, pp. 051 112-1-051 112-3, 2007.
69. H. D. Summers and P. Rees, "Derivation of a modified Fermi-Dirac distribution for quantum dot ensembles under non-thermal conditions," J. Appl. Phys., vol. 101, pp. 073 106-1-073 106-8, 2007.