Temperature dependence of gain saturation in multilevel quantum dot lasers

IEEE Journal of Quantum Electronics

Volumn 36, Issue 9, 2000, Pages 1065-1071

  Park, Gyoungwon ^a   Shchekin, Oleg B ^a   Deppe, Dennis G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

GAIN SATURATION; OPTICAL GAIN; QUANTUM DOT LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034273435     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.863959     Document Type: Article

References (19)

1. 0 injection laser emission from InGaAs quantum dots," Electron. Lett., vol. 30, pp. 1416-1417, 1994.
2. 0.5As quantum dots by current injection," IEEE Photon. Technol. Lett., vol. 7, pp. 1385-1387, 1995.
3. 0.6 As self-organized quantum dot lasers," Electron. Lett., vol. 32, pp. 1374-1375, 1996.
4. D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "1.3 μm room-temperature GaAs-based quantum-dot laser," Appl. Phys. Lett., vol. 73, pp. 2564-2466, 1998.
5. S. Mukai, N. Ohtsuka, H. Shoji, M. Sugawara, N. Yokoyama, and H. Ishikawa, "1.3 μm CW lasing of InGaAs/GaAs quantum dots at room temperature with a threshold current of 8 mA," IEEE Photon. Technol. Lett., vol. 11, pp. 1205-1207, 1999.
6. G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, "Low threshold oxide confined 1.3 μm quantum dot laser," IEEE Photon. Technol. Lett., vol. 12, pp. 230-232, 2000.
7. G. Park, D. L. Huffaker, Z. Zou, O. B. Shchekin, and D. G. Deppe, "Temperature dependence of lasing characteristics for long-wavelength (1.3 μm) GaAs-based quantum dot lasers," IEEE Photon. Technol. Lett., vol. 11. pp. 301-303, 1999.
8. L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, "Optical characteristics of 1.24 μm InAs quantum dot laser diodes," IEEE Photon. Technol. Lett., vol. 11, pp. 931-933, 1999.
9. D. L. Huffaker and D. G. Deppe, "Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 73, pp. 520-522, 1998.
10. 0.5 As quantum dots on GaAs substrate emitting at 1.3 μm," Jpn. J. Appl. Phys., vol. 33, pp. 1710-1712, 1994.
11. R. Mirin, J. Ibbetson, K. Nishi, A. Gossard, and J. Bowers, "1.3 μm photoluminescence from InGaAs quantum dots on GaAs," Appl. Phys. Lett., vol. 67, pp. 3795-3797, 1995.
12. S. Krishna, D. Zhu, J. Xu, K. Linder, O. Qasaimeh, P. Bhattacharya, and D. L. Huffaker, "Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm," J. Appl. Phys., vol. 86, pp. 6135-6138, 1999.
13. L. V. Asryan and R. A. Suris, "Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser," Semicond. Sci. Technol., vol. 11, pp. 554-567, 1996.
14. D. G. Deppe, D. L. Huffaker, S. Csutak, Z. Zou, G. Park, and O. B. Shchekin, "Spontaneous emission and threshold characteristics of 1.3 μm InGaAs-GaAs quantum dot GaAs-based lasers," IEEE J. Quantum Electron., vol. 35, pp. 1502-1508, 1999.
15. M. Sargent, M. O. Scully, and W. A. Lamb, Laser Physics. Reading, MA: Addison-Wesley, 1974, ch. XIX.
16. H. Jiang and J. Singh, "Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study," Phys. Rev. B, vol. 56, pp. 4696-4701, 1997.
17. D. L. Huffaker, Z. Z. Zou, G. Park, O. B. Shchekin, and D. G. Deppe, "Effects of spontaneous emission rates on lasing characteristics of long-wavelength ( 1.3 μm) GaAs-based quantum dot lasers," J. Electron. Mat., vol. 28, pp. 532-536, 1999.
18. A. V. Uskov, K. Nishi, and R. Lang, "Collisional broadening and shift of spectral lines in quantum dot lasers," Appl. Phys. Lett., vol. 74, pp. 3081-3083, 1999.
19. A. E. Zhukov, V. M. Ustinov, A. Y. Egorov, A. R. Kovsh, A. F. Tsatsulnikov, N. N. Ledentsov, S. V. Zaitsev, N. Y. Gordeev, P. S. Kopev, and Z. I. Alferov, "Negative characteristic temperature of InGaAs quantum dot injection laser," Jpn. J. Appl. Phys., vol. 36, pp. 4216-4218, 1997.