Gain characteristics of quantum dot injection lasers

Semiconductor Science and Technology

Volumn 14, Issue 1, 1999, Pages 118-123

  Zhukov, A E ^a   Kovsh, A R ^a   Ustinov, V M ^a   Egorov, A Yu ^a   Ledentsov, N N ^a   Tsatsul'nikov, A F ^a   Maximov, M V ^a   Shernyakov, Yu M ^a   Kopchatov, V I ^a   Lunev, A V ^a   Kop'ev, P S ^a   Bimberg, D ^b   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

EXCITED STATE LASING; GAIN CHARACTERISTICS;

INJECTION LASERS;

EID: 0032712543     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/1/020     Document Type: Article

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