Properties of a nanocrystalline GaN p-n homojunction prepared by a high pressure sputtering technique

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1557-1562

  Das, S N ^a   Pal, A K ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PRESSURE EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS;

HOMOJUNCTIONS; NANOCRYSTALLINE THIN FILMS; PRESSURE SPUTTERING;

SEMICONDUCTOR JUNCTIONS;

EID: 33846863598     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/010     Document Type: Article

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