Kinetic frustration of Ostwald ripening in Ge/Si(100) hut ensembles

Solid State Communications

Volumn 149, Issue 35-36, 2009, Pages 1403-1409

  McKay, Michael R ^a   Venables, J A ^b,c   Drucker, Jeff ^b  

^a AZ 85281   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

A. Nanostructures; A. Surfaces and interfaces; B. Crystal growth; B. Epitaxy

Indexed keywords

A. NANOSTRUCTURES; A. SURFACES AND INTERFACES; B. CRYSTAL GROWTH; B. EPITAXY; EXPERIMENTAL OBSERVATION; FEEDBACK MECHANISMS; GE ISLAND; HUT CLUSTERS; ISLAND GROWTH; LOW AREA; LOW DENSITY; MEAN-FIELD; NUCLEATION MODELS; NUCLEATION SITES; TIME-SCALE;

ATOMIC LAYER DEPOSITION; CRYSTALLIZATION; EPITAXIAL GROWTH; GERMANIUM; GRAIN BOUNDARIES; NANOSTRUCTURES; NUCLEATION; OSTWALD RIPENING; SEMICONDUCTING GERMANIUM COMPOUNDS; SUPERSATURATION;

CRYSTAL GROWTH;

EID: 67650578099     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.04.047     Document Type: Article

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