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Volumn 591, Issue 1-3, 2005, Pages 23-31

Atomistic modeling of step formation and step bunching at the Ge(1 0 5) surface

Author keywords

(1 0 5)Ge surface; Dot facets; Empirical calculations; Ge Si(0 0 1); Molecular dynamics; Step formation and bunching

Indexed keywords

ATOMIC PHYSICS; COMPUTER SIMULATION; GEOMETRY; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; SURFACE CHEMISTRY;

EID: 24944456273     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.06.016     Document Type: Article
Times cited : (20)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.