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Volumn 591, Issue 1-3, 2005, Pages 23-31
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Atomistic modeling of step formation and step bunching at the Ge(1 0 5) surface
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Author keywords
(1 0 5)Ge surface; Dot facets; Empirical calculations; Ge Si(0 0 1); Molecular dynamics; Step formation and bunching
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Indexed keywords
ATOMIC PHYSICS;
COMPUTER SIMULATION;
GEOMETRY;
MATHEMATICAL MODELS;
MOLECULAR DYNAMICS;
SURFACE CHEMISTRY;
(1 0 5)GE SURFACE;
DOT FACETS;
EMPIRICAL CALCULATIONS;
GE/SI(0 0 1);
STEP FORMATION AND BUNCHING;
GERMANIUM;
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EID: 24944456273
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2005.06.016 Document Type: Article |
Times cited : (20)
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References (17)
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