SCOPUS 정보 검색 플랫폼

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1833-1835

A new 50-nm nMOSFET with side-gates for virtual source-drain extensions

(5) Choi, Young Jin a Choi, Byung Yong a Kim, Kyung Rok a Lee, Jong Duk a Park, Byung Gook a

a Seoul National University (South Korea)

Author keywords

50 nm nMOSFET; NAND gate; Side gate; Virtual source drain extension (SDE)

Indexed keywords

ELECTRIC CURRENT DISTRIBUTION; GATES (TRANSISTOR); LOGIC GATES; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN-INDUCED BARRIER LOWERING; MULTI-INPUT GATES; SIDE GATES; VIRTUAL SOURCE-DRAIN EXTENSIONS;

MOSFET DEVICES;

EID: 0036772966 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/TED.2002.803648 Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.