Shielded channel double-gate MOSFET: A novel device for reliable nanoscale CMOS applications

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 3, 2005, Pages 509-514

  Orouji, Ali A ^a,b,c   Jagadesh Kumar, M ^a,b,d  

^a IEEE   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^c SEMNAN UNIVERSITY   (Iran)

^d Institution of Electronics and Telecommunication Engineers IETE   (India)

Author keywords

Hot carrier effect; Shielded channel (SC); Short channel effects (SCEs); Side gate; SOI MOSFET, subthreshold swing; Threshold voltage; Two dimensional (2 D) simulation

Indexed keywords

HOT CARRIER EFFECT; SHIELDED CHANNEL (SC); SHORT-CHANNEL EFFECTS (SCES); SIDE GATE; SOI MOSFET, SUBTHRESHOLD SWING; TWO-DIMENSIONAL (2-D) SIMULATION;

COMPUTER SIMULATION; ELECTRIC FIELDS; FIELD EFFECT SEMICONDUCTOR DEVICES; SEMICONDUCTOR DEVICES; THRESHOLD VOLTAGE; TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 29344473782     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.853505     Document Type: Article

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