Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects

Superlattices and Microstructures

Volumn 39, Issue 5, 2006, Pages 395-405

  Orouji, Ali A ^a   Kumar, M Jagadesh ^b  

^a SEMNAN UNIVERSITY   (Iran)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Electrically shallow junction; Hot electron effect; Insulated gate field effect transistor; Short channel effects (SCEs); Silicon on insulator (SOI) MOSFET; Threshold voltage; Two dimensional (2 D) simulation

Indexed keywords

ELECTRONS; FIELD EFFECT TRANSISTORS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

ELECTRICALLY SHALLOW JUNCTION; HOT ELECTRON EFFECT; INSULATED GATE FIELD EFFECT TRANSISTOR; SHORT-CHANNEL EFFECTS (SCES); SILICON-ON-INSULATOR (SOI) MOSFET; TWO-DIMENSIONAL (2-D) SIMULATION;

MOSFET DEVICES;

EID: 33646050063     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.08.020     Document Type: Article

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