General framework about defect creation at the SiSi O2 interface

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Guerin, C ^a,b   Huard, V ^a   Bravaix, A ^b  

^a STMICROELECTRONICS   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOND-BREAKING; CHANNEL HOT CARRIERS; COLD CARRIERS; DEFECT CREATION; ELECTRICAL FIELD; IF THERE ARE; INTERFACE STATE; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; NEGATIVE BIAS TEMPERATURE INSTABILITY; SI-H BONDS; THEORETICAL FRAMEWORK;

CHARGE COUPLED DEVICES; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 67649556912     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133096     Document Type: Article

References (54)

1. Y. Nishi, Jpn. J. Appl. Phys. 10, 52 (1971). 10.1143/JJAP.10.52
2. D. J. Di Maria and J. W. Stasiak, J. Appl. Phys. 65, 2342 (1989). 10.1063/1.342824
3. J. H. Stathis, IEEE Int. Reliab. Phys. Symp. Proc. 2001, 132.
4. J. Sú and E. Y. Wu, Tech. Dig.-Int. Electron Devices Meet. 2005, 388.
5. N. D. Lang, Phys. Rev. B 45, 13599 (1992). 10.1103/PhysRevB.45.13599
6. R. E. Walkup, D. M. Newns, and Ph. Avouris, Phys. Rev. B 48, 1858 (1993). 10.1103/PhysRevB.48.1858
7. G. P. Salam, M. Persson, and R. E. Palmer, Phys. Rev. B 49, 10655 (1994). 10.1103/PhysRevB.49.10655
8. K. Stokbro, C. Thirstrup, M. Sakurai, U. Quaade, B. Yu-Kuang Hu, F. Perez-Murano, and F. Grey, Phys. Rev. Lett. 80, 2618 (1998). 10.1103/PhysRevLett.80.2618
9. K. Stokbro, B. Y.-K. Hu, C. Thirstrup, and X. C. Xie, Phys. Rev. B 58, 8038 (1998). 10.1103/PhysRevB.58.8038
10. T.-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, and R. E. Walkup, Science 268, 1590 (1995). 10.1126/science.268.5217. 1590
11. C. Kaneta, T. Yamasaki, and Y. Kosaka, Fujitsu Sci. Tech. J. 39, 106 (2003).
12. C. G. Van de Walle and R. A. Street, Phys. Rev. B 49, 14766 (1994). 10.1103/PhysRevB.49.14766
13. B. Tuttle and C. G. Van de Walle, Phys. Rev. B 59, 12884 (1999). 10.1103/PhysRevB.59.12884
14. B. Tuttle, Phys. Rev. B 60, 2631 (1999). 10.1103/PhysRevB.60.2631
15. M. Budde, G. Lüpke, C. Parks Cheney, N. H. Tolk, and L. C. Feldman, Phys. Rev. Lett. 85, 1452 (2000). 10.1103/PhysRevLett.85.1452
16. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Saunders College Publishing, Philadelphia, 1976).
17. M. Budde, G. Lüpke, E. Chen, X. Zhang, N. H. Tolk, L. C. Feldman, E. Tarhan, A. K. Ramdas, and M. Stavola, Phys. Rev. Lett. 87, 145501 (2001). 10.1103/PhysRevLett.87.145501
18. A. Nitzan and J. Jortner, Mol. Phys. 25, 713 (1973). 10.1080/ 00268977300100651
19. G. Lüpke, X. Zhang, B. Sun, A. Fraser, N. H. Tolk, and L. C. Feldman, Phys. Rev. Lett. 88, 135501 (2002). 10.1103/PhysRevLett.88.135501
20. B. Sun, G. A. Shi, S. V. S. Nageswara Rao, M. Stavola, N. H. Tolk, S. K. Dixit, L. C. Feldman, and G. Lüpke, Phys. Rev. Lett. 96, 035501 (2006). 10.1103/PhysRevLett.96.035501
21. R. Biswas, Y.-P. Li, and B. C. Pan, Appl. Phys. Lett. 72, 3500 (1998). 10.1063/1.121640
22. J. W. McPherson, J. Appl. Phys. 99, 083501 (2006). 10.1063/1.2189930
23. J. R. Jamesona, W. Harrison, P. B. Griffin, J. D. Plummer, and Y. Nishi, J. Appl. Phys. 100, 124104 (2006). 10.1063/1.2397323
24. V. Huard, C. Parthasarathy, N. Rallet, C. Guerin, M. Mammase, D. Barge, and C. Ouvrard, Tech. Dig.-Int. Electron Devices Meet. 2007, 797.
25. H. Kufluoglu and M. A. Alam, Tech. Dig.-Int. Electron Devices Meet. 2004, 113.
26. V. Huard, M. Denais, and C. Parthasarathy, Microelectron. Reliab. 46, 1 (2006). 10.1016/j.microrel.2005.02.001
27. S. Chakravarthi, A. T. Krishnana, V. Reddya, and S. Krishnan, Microelectron. Reliab. 47, 863 (2007). 10.1016/j.microrel.2006.10.008
28. M. A. Alam and S. Mahapatra, Microelectron. Reliab. 45, 71 (2005). 10.1016/j.microrel.2004.03.019
29. R. Biswas and Y.-P. Li, Phys. Rev. Lett. 82, 2512 (1999). 10.1103/PhysRevLett.82.2512
30. Ph. Avouris, R. E. Walkup, A. R. Rossi, T.-C. Shen, G. C. Abeln, J. R. Tucker, and J. W. Lyding, Chem. Phys. Lett. 257, 148 (1996). 10.1016/0009-2614(96)00518-0
31. H. Ueba, Appl. Surf. Sci. 237, 565 (2004). 10.1016/j.apsusc.2004.06.113
32. M. V. Fischetti and S. E. Laux, Tech. Dig.-Int. Electron Devices Meet. 1995, 305.
33. P. A. Childs and C. C. C. Leung, J. Appl. Phys. 79, 222 (1996). 10.1063/1.360935
34. J. D. Bude, T. Iizuka, and Y. Kamakura, Tech. Dig.-Int. Electron Devices Meet. 1996, 865.
35. S. E. Rauch, G. LaRosa, and F. J. Guarin, IEEE Trans. Device Mater. Reliab. 1, 113 (2001). 10.1109/7298.956705
36. B. N. J. Persson and Ph. Avouris, Surf. Sci. 390, 45 (1997). 10.1016/S0039-6028(97)00507-4
37. K. Hess, L. F. Register, B. Tuttle, J. Lyding, and I. C. Kizilyalli, Physica E (Amsterdam) 3, 1 (1998).
38. E. T. Foley, A. F. Kam, J. W. Lyding, and Ph. Avouris, Phys. Rev. Lett. 80, 1336 (1998). 10.1103/PhysRevLett.80.1336
39. W. McMahon, K. Matsuda, J. Lee, K. Hess, and J. Lyding, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems., San Juan Marriott Resort & Stellaris Casino, Puerto Rico, 576 (2002).
40. Y. Kamakura, H. Mizuno, M. Yamaji, M. Morifuji, K. Taniguchi, C. Hamaguchi, T. Kunikiyo, and M. Takenaka, J. Appl. Phys. 75, 3500 (1994). 10.1063/1.356112
41. D. J. DiMaria, J. Appl. Phys. 87, 8707 (2000). 10.1063/1.373600
42. B. Doyle, M. Bourcerie, C. Bergonzoni, R. Benecchi, A. Bravaix, K. R. Mistry, and A. Boudou, IEEE Trans. Electron Devices 37, 1869 (1990). 10.1109/16.57138
43. D. Vuillaume and A. Bravaix, J. Appl. Phys. 73, 2559 (1993). 10.1063/1.353065
44. A. Bravaix, G. Goguenheim, V. Huard, M. Denais, C. Parthasarathy, F. Perrier, N. Revil, and E. Vincent, Microelectron. Reliab. 45, 1370 (2005). 10.1016/j.microrel.2005.07.023
45. C. Guerin, V. Huard, and A. Bravaix, IEEE Trans. Device Mater. Reliab. 7, 225 (2007). 10.1109/TDMR.2007.901180
46. S. E. Rauch III and G. La Rosa, IEEE Trans. Device Mater. Reliab. 5, 701 (2005). 10.1109/TDMR.2005.860560
47. A. Van Wieringen and N. Warmoltz, Physica (Amsterdam) 22, 849 (1956). 10.1016/S0031-8914(56)90039-8
48. E. Cartier, D. A. Buchanan, J. H. Stathis, and D. J. Dimaria, J. Non-Cryst. Solids 187, 244 (1995). 10.1016/0022-3093(95)00143-3
49. B. Tuttle, Phys. Rev. B 61, 4417 (2000). 10.1103/PhysRevB.61.4417
50. B. L. Sopori, K. M. Jones, X. Deng, R. Matson, M. Al-Jassim, and S. Tsuo, Photovoltaic Specific Conference 1991 (unpublished), p. 833.
51. P. L. Lee, M. M. Kuo, K. Seki, P. K. Ko, and C. Hu, Tech. Dig.-Int. Electron Devices Meet. 1988, 134.
52. C. G. Van de Walle and W. B. Jackson, Appl. Phys. Lett. 69, 2441 (1996). 10.1063/1.117664
53. Z. Chen, J. Guo, and P. Ong, Appl. Phys. Lett. 83, 2151 (2003). 10.1063/1.1611623
54. S. Watanabe and Y. Tamura, Fujitsu Sci. Tech. J. 39, 84 (2003).