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Physical Review Letters

Volumn 96, Issue 3, 2006, Pages

Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors

(8) Sun, B a Shi, G A b Nageswara Rao, S V S c Stavola, M b Tolk, N H c Dixit, S K c Feldman, L C c Lupke G a

a Dept of Economics and Thomas Jefferson Program in Public Policy at the College of William and Mary (United States)

b LEHIGH UNIVERSITY (United States)

c VANDERBILT UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; HYDROGEN; INFRARED RADIATION; PHONONS; VIBRATIONS (MECHANICAL);

GIANT ISOTOPE EFFECT; INFRARED ABSORPTION SPECTROSCOPY; TRANSIENT BLEACHING SPECTROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 32644469111 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.96.035501 Document Type: Article

Times cited : (34)

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