Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors

Physical Review Letters

Volumn 96, Issue 3, 2006, Pages

  Sun, B ^a   Shi, G A ^b   Nageswara Rao, S V S ^c   Stavola, M ^b   Tolk, N H ^c   Dixit, S K ^c   Feldman, L C ^c   Lupke G ^a  

^a William and Mary   (United States)

^b LEHIGH UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; HYDROGEN; INFRARED RADIATION; PHONONS; VIBRATIONS (MECHANICAL);

GIANT ISOTOPE EFFECT; INFRARED ABSORPTION SPECTROSCOPY; TRANSIENT BLEACHING SPECTROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 32644469111     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.96.035501     Document Type: Article

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