The effects of a multiple carrier model of interface trap generation on lifetime extraction for MOSFETs

2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Volumn , Issue , 2002, Pages 576-579

  McMahon, W ^a   Matsuda, K ^a,b   Lee, J ^a   Hess, K ^a   Lyding, J ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b NARUTO UNIVERSITY OF EDUCATION   (Japan)

Author keywords

Deuterium; Interface state generation; Lifetime extrapolation

Indexed keywords

DESORPTION; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; FUNCTIONS; HYDROGEN BONDS; IMPACT IONIZATION; INTERFACES (MATERIALS); ISOTOPES; PHONONS; SCANNING TUNNELING MICROSCOPY; SCATTERING;

ELECTRON-HOLE PAIRS; INTERFACE STATE GENERATION; LIFETIME EXTRAPOLATION; LUCKY ELECTRON MODELS (LEM);

MOSFET DEVICES;

EID: 6344262312     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. E. Takeda, C. Y. Yang, A. Miura-Hamada, "Hot-Carrier Effects in MOS Devices", Academic Press, pp. 79-87, 1995.
2. S. Sze, "Physics of Semiconductor Devices", John Wiley & Sons, p. 480, 1981.
3. C. Hu, S. C. Tam, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, K. W. Terrill, IEEE Trans. Elect. Devs. 30, p. 375, 1985.
4. S. Rauch III, F. J. Guarin, G. LaRosa, IEEE Elect. Dev. Letters, 19, 463, 1998.
5. S. Rauch III, G. LaRosa, F. J. Guarin, IEEE International Reliability Physics Symposium Proceedings, p. 399, 2001.
6. J. Bude, K. Hess, J. Appl. Phys. 72 (8), p. 3554, 1992.
7. Ph. Avouris, R. E. Walkup, A. R. Rossi, R.-C. Shen, G. C. Abeln, J. R. Tucker, J. W. Lyding, Chem. Phys. Letters, 257, pp. 148-154, 1996
8. T.-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding. Ph. Avouris, R. E. Walkup, Science, 268, p. 1590, 1995.
9. R. E. Walkup, D. M. Newns, Ph. Avouris, Atomic and Nanometer-Scale Modification of Materials: Fundamentals and Applications, pp. 97-109, 1993.