Nano-scale simulation for advanced gate dielectrics

Fujitsu Scientific and Technical Journal

Volumn 39, Issue 1, 2003, Pages 106-118

  Kaneta, Chioko ^a   Yamasaki, Takahiro ^a   Kosaka, Yuko ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRONIC PROPERTIES; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOLECULAR DYNAMICS; QUANTUM THEORY; SEMICONDUCTING SILICON; SILICA;

ATOMIC-SCALE PHENOMENA; FIRST-PRINCIPLES MOLECULAR DYNAMICS METHOD; NANO-SCALE SIMULATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0042701924     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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