Hydrogen flip model for light-induced changes of amorphous silicon

Physical Review Letters

Volumn 82, Issue 12, 1999, Pages 2512-2515

  Biswas, R ^a   Li, Y P ^a,b  

^a Iowa State University   (United States)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC CHARGE; HYDROGEN BONDS; INFRARED RADIATION; LIGHT ABSORPTION; MATHEMATICAL MODELS; MOLECULAR STRUCTURE; POTENTIAL ENERGY;

DOUBLE-WELL POTENTIAL ENERGY; DYNAMIC EFFECTIVE CHARGE; HYDROGEN FLIP MODEL;

AMORPHOUS SILICON;

EID: 0032613495     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.82.2512     Document Type: Article

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