Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs

Microelectronics Reliability

Volumn 45, Issue 9-11, 2005, Pages 1370-1375

  Bravaix, A ^a   Goguenheim, D ^a   Denais, M ^a,b   Huard, V ^c   Parthasarathy, C ^b   Perrier, F ^b   Revil, N ^b   Vincent, E ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC CIRCUITS; NITRIDING; NITROGEN COMPOUNDS; OXIDES; STRESS ANALYSIS;

COLD PHASES; GATE-OXIDE MOSFET; HOLE INJECTIONS; QUASI-STATIC TIME FACTORS;

MOSFET DEVICES;

EID: 24144487157     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.07.023     Document Type: Conference Paper

References (9)

1. H. Heremans, R. Bellens, G. Groeseneken, and H.E. Maes IEEE Trans Elec Dev 35 12 1988 2194
2. W. Weber, M. Brox, T. Künemund, H.M. Mühlhoff, and D.S. Landsiedel IEEE Trans Elec Dev 38 8 1991 1859
3. E. Li, E. Rosenbaum, J. Tao, and P. Fang IEEE Trans Elec Dev 48 4 2001 671
4. A. Bravaix, D. Goguenheim, N. Revil, and E. Vincent Microelec Reliab 44 1 2004 65
5. B.S. Doyle, and G.J. Dunn IEEE Elec Dev Lett 13 1992 38
6. D. Vuillaume, and A. Bravaix J Appl Phys 73 5 1993 2559
7. C.J. Nicklaw Trans on Nuclear Sci 13 1992 38
8. Denais M, et al. in IEDM Proc 2004:109.
9. R. Bellens, G. Groeseneken, H. Heremans, and H.E. Maes IEEE Trans Elec Dev 41 8 1994 1421