An investigation of control mechanisms of the excitonic behavior in reactively sputtered ZnO on (0001) Al 2O 3

Journal of Applied Physics

Volumn 100, Issue 10, 2006, Pages

  Tuzemen S ^a   Gür, Emre ^a   Yildirim, T ^a   Xiong, G ^b,c   Williams, R T ^b  

^a ATATÜRK UNIVERSITY   (Turkey)

^b WAKE FOREST UNIVERSITY   (United States)

^c PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEUTRAL ACCEPTOR BOUND EXCITONS; P -TYPE CONDUCTIVITY; RESIDUAL ACCEPTORS; VALENCE BAND;

ABSORPTION; ALUMINUM COMPOUNDS; BAND STRUCTURE; CORRELATION METHODS; EXCITONS; SPUTTERING;

ZINC OXIDE;

EID: 33845202281     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2386926     Document Type: Article

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