Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2427-2429

  Wang, Cheng Xin ^a   Yang, Guo Wei ^a   Liu, Hong Wu ^b   Han, Yong Hao ^b   Luo, Ji Feng ^b   Gao, Chun Xiao ^b   Zou, Guang Tian ^b  

^a SUN YAT SEN UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; FILM GROWTH; HETEROJUNCTIONS; MAGNETRON SPUTTERING; MATHEMATICAL MODELS; SEMICONDUCTOR LASERS; SINGLE CRYSTALS; ZINC OXIDE;

CONDUCTION BANDS; CONTACT RESISTANCES; HETEROJUNCTION DIODES; IDEALITY FACTORS;

LIGHT EMITTING DIODES;

EID: 2142812973     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689397     Document Type: Article

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