Nonradiative recombination and band bending of p-Si(100) surfaces during electrochemical deposition of polycrystalline ZnO

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 157-161

  Rappich, J ^a   Fahoume, M ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b IBN TOFAIL UNIVERSITY   (Morocco)

Author keywords

Nonradiative recombination; Photoluminescence; Photovoltage; ZnO electrodeposition

Indexed keywords

CURRENT DENSITY; ELECTROCHEMISTRY; ELECTRODEPOSITION; ELECTRODES; POLARIZATION; POLYCRYSTALLINE MATERIALS; SURFACE STRUCTURE; THIN FILMS; ZINC OXIDE;

NONRADIATIVE RECOMBINATION; PHOTOVOLTAGE; ZNO ELECTRODEPOSITION;

SILICON COMPOUNDS;

EID: 22944486353     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.057     Document Type: Conference Paper

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