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Applied Physics A: Materials Science and Processing

Volumn 87, Issue 4, 2007, Pages 787-791

Fabrication of transparent p-n junction composed of heteroepitaxially grown p-Li0.15Ni0.85O and n-ZnO films for UV-detector applications

(2) Zhuang, L a Wong, K H a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; OPACITY; PULSED LASER DEPOSITION; SEMICONDUCTOR JUNCTIONS; ULTRAVIOLET DETECTORS; ZINC OXIDE;

BANDGAP HETEROJUNCTIONS; ELECTRICAL RECTIFICATION; PHOTORESPONSIVITY;

THIN FILMS;

EID: 34247399019 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-007-3921-0 Document Type: Article

Times cited : (18)

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