Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Talin, A Alec ^a,b   Wang, George T ^c   Lai, Elaine ^a   Anderson, Richard J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CENTER FOR INTEGRATED NANOTECHNOLOGIES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; GROWTH TEMPERATURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE;

ELECTRICAL TRANSPORT; OHMIC TRANSPORT; SUBSTRATE TEMPERATURE;

NANOWIRES;

EID: 40549145221     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2889941     Document Type: Article

References (14)

1. Y. Li, J. Xiang, F. Qian, S. Gradecak, Y. Wu, H. Yan, D. A. Blom, and C. M. Lieber, Nano Lett. NALEFD 1530-6984 10.1021/nl060849z 6, 1468 (2006).
2. D. J. Sirbuly, M. Law, H. Yan, and P. Yang, J. Phys. Chem. B JPCBFK 1089-5647 10.1021/jp051813i 105, 15190 (2005).
3. J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, R. J. Saykally, Nat. Mater. NMAACR 1476-1122 10.1038/nmat728 1, 106 (2002).
4. G. T. Wang, A. A. Talin, D. J. Werder, J. R. Creighton, E. Lai, R. J. Anderson, and I. Arslan, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/17/ 23/011 17, 5773 (2006).
5. S. Gradecak, F. Qian, Y. Li, H.-G. Park, and C. M. Lieber, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2115087 87, 173111 (2005).
6. J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, Th. Frauenheim, S. Oberg, and P. R. Briddon, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58. 12571 58, 12571 (1998).
7. M. A. Reshchikov and H. Morkoc, Physica B PHYBE3 0921-4526 376-377, 428 (2006).
8. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970), Sec. 2.
9. A. D. Schriker, F. M. Davidson III, R. J. Wiacek, and B. A. Korgel, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/17/10/040 17, 2681 (2006).
10. Y. Gu and L. J. Lauhon, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2358316 89, 143102 (2006).
11. Y. J. Sun, O. Brandt, and K. H. Ploog, J. Mater. Res. JMREEE 0884-2914 18, 1247 (2003).
12. R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. V. d. Hart, T. Soica, and H. Luth, Nano Lett. NALEFD 1530-6984 10.1021/nl0500306 5, 981 (2005).
13. F. Jones, F. Leonard, A. A. Talin, and N. S. Bell, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2751116 102, 014305 (2007).
14. E. Stern, G. Cheng, E. Cimpoiasu, R. Klie, S. Guthrie, J. Klemic, I. Kretzschmar, E. Steinlauf, D. Turner-Evans, E. Broomfield, J. Hyland, R. Koudelka, T. Boone, M. Young, A. Sanders, R. Munden, T. Lee, D. Routenberg, and M. A. Reed, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/16/12/037 16, 2941 (2005).