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Volumn 18, Issue 22, 2006, Pages 5037-5045

TEM studies of Ge nanocrystal formation in PECVD grown SiO 2:Ge/SiO2 multilayers

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION; ELECTRON ENERGY ANALYZERS; FILM GROWTH; GERMANIUM; MULTILAYERS; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

EID: 33744497814     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/22/004     Document Type: Article
Times cited : (14)

References (24)
  • 24
    • 35949006801 scopus 로고
    • Maeda Y 1995 Phys. Rev. B 51 1658
    • (1995) Phys. Rev. , vol.51 , Issue.3 , pp. 1658
    • Maeda, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.