Wetting angle and surface tension of germanium melts on different substrate materials

Journal of Crystal Growth

Volumn 231, Issue 4, 2001, Pages 448-457

  Kaiser, N ^a,b   Croll A ^b,c   Szofran, F R ^b   Cobb, S D ^b   Benz, K W ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b NASA MARSHALL SPACE FLIGHT CENTER   (United States)

^c TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

A1. Surface tension; A1. Wetting angle; B2. Semiconducting germanium

Indexed keywords

AEROGELS; ALUMINUM NITRIDE; BORON COMPOUNDS; CRYSTAL GROWTH FROM MELT; FUSED SILICA; GRAPHITE; LIQUID METALS; MOLTEN MATERIALS; SAPPHIRE; SILICON CARBIDE; SILICON NITRIDE; SURFACE TENSION; SURFACE TREATMENT; SYNTHETIC DIAMONDS; THERMAL EFFECTS; WETTING;

PYROLYTIC BORON NITRIDE; SESSILE DROP TECHNIQUE;

SEMICONDUCTING GERMANIUM;

EID: 0035502173     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01480-4     Document Type: Article

References (23)

1. Detached growth of Ga-doped Germanium