Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1876-1882

  Grasser, T ^a   Kaczer, B ^c   Goes, W ^a   Aichinger, Th ^d   Hehenberger, Ph ^b   Nelhiebel, M ^e  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c IMEC   (Belgium)

^d KAI   (Austria)

^e INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Interface states; Modeling hole trapping; Negative bias temperature instability; Oxide charges; Reliability

Indexed keywords

AMORPHOUS OXIDES; DEGRADATION MECHANISM; DEPASSIVATION; ELASTIC TUNNELING; EXPERIMENTAL DATA; FIELD EFFECTS; FULL MODEL; HOLE TRAPPING; INTERFACE STATES; MODELING HOLE TRAPPING; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEUTRAL OXYGEN VACANCY; OXIDE CHARGES; OXYNITRIDES; PARASITIC COMPONENTS; POSITIVELY CHARGED; SILICON DANGLING BOND;

DEGRADATION; HOLE TRAPS; NEGATIVE TEMPERATURE COEFFICIENT; OXYGEN; OXYGEN VACANCIES; SILICON COMPOUNDS; SILICON OXIDES; THERMODYNAMIC STABILITY;

MOSFET DEVICES;

EID: 67349279408     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.120     Document Type: Article

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