Role of lanthanum in the gate stack: Co-sputtered TaLaN metal gates on Hf-based dielectrics

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 235-239

  Coss, Brian ^a   Kim, Hyun Chul ^a   Aguirre Tostado, Francisco S ^a   Wallace, Robert M ^a   Kim, Jiyoung ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

EWF; Hafnium Oxide; High k dielectrics; Lanthanum; Metal gate; TaN

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON SPECTROSCOPY; FUNCTIONS; GATE DIELECTRICS; HAFNIUM; HAFNIUM COMPOUNDS; LANTHANUM; LANTHANUM ALLOYS; LOGIC GATES; METALS; NITRIDES; OXIDES; OXYGEN; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; PROBABILITY DENSITY FUNCTION; SPECTRUM ANALYSIS; TANNING; TANTALUM; TANTALUM COMPOUNDS; TRANSITION METALS; WORK FUNCTION;

EWF; HAFNIUM OXIDE; HIGH-K DIELECTRICS; METAL GATE; TAN;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 59049090059     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.05.027     Document Type: Article

References (20)

1. Wilk G.D., Wallace R.M., and Anthony J.M. J. Appl. Phys. 89 (2001) 5243-5275
2. P. Sivasubramani, T.S. Böscke, J. Huang, C.D. Young, P.D. Kirsch, S.A. Krishnan, M.A. Quevedo-Lopez, S. Govindarajan, B.S. Ju, H.R. Harris, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, J. Kim, B.E. Gnade, R.M. Wallace, G. Bersuker, B.H. Lee, R. Jammy, VLSI Conf. Tech. Dig., 68, Kyoto, Japan, 2007 68-69.
3. Ren C., Chan D.S.H., Li M.-F., Loh W.-Y., Balakumar S., Tung C.H., Balasubramanian N., and Kwong D.-L. IEEE Trans. Electron. Dev. 53 (2006) 1877-1884
4. Yeo Y.C. Thin Solid Films 462-463 (2004) 34-41
5. Yeo Y.C., King T.J., and Hu C. J. Appl. Phys. 92 2 (2002) 7266-7271
6. H.N. Alshareef, H.R. Harris, H.C. Wen, C.S. Park, C. Huffman, K. Choi, H.F. Luan, P. Majhi, B.H. Lee, R. Jammy, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, IEEE 2006 Symp. VLSI Tech. Dig., Honolulu, Hawaii, 2006, 10-11.
7. Sivasubramani P., Kim J., Kim M.J., Gnade B.E., and Wallace R.M. J. Appl. Phys. 101 (2007) 114108
8. G. Brown, G. Smith, J. Saulters, K. Matthews, H.C. Wen, P. Majhi, B.H. Lee, Proc. ICICDT, Austin, TX, 2005, 69-72.
9. Wen H.C., Choi R., Brown G.A., Böscke T.S., Matthews K., Harris H.R., Choi K., Alshareef H.N., Luan H., Bersuker G., Majhi P., Kwong D.-L., and Lee B.H. IEEE Elec. Dev. Lett. 27 7 (2006) 598-601
10. Shamiryan D., Paraschiv V., Tökei Z., Beckx S., and Boullart W. Electrochem. Solid-State Lett. 9 8 (2006) G272-G275
11. Lebedinskii Y., Zenkevich A., and Gusev E.P. J. Appl. Phys. 101 (2007) 074504
12. Charge Correction for Si-2 p from NIST XPS database. Franklin G.E., Rich D.H., Hong H., Miller T., and Chiang T.-C. Phys. Rev. B 45 (1992) 3426-3434
13. Vitchev R.G., Pireaux J.J., Conrad T., Bender H., Wolstenhome J., and Defranoux C. Appl. Surf. Sci. 235 (2004) 21-25
14. G. Wendin, Structure and Bonding: Photoelectron Spectra, Springer-Verlag, 1981 (ISBN: 0387105840).
15. Binding energy scales in this work were carefully calibrated according to ASTM standard E2108-00. .
16. Chambers S.A., Droubay T., Kaspar T.C., and Gutowski M. J. Vac. Sci. Tech. B. 22 4 (2004) 2205-2215
17. Rajagopal A., Wu C.I., and Kahn A. J. Appl. Phys. 83 5 (1998) 2649-2655
18. D.G. Park, Z.J. Luo, N. Elderman, W. Zhu, P. Nguyen, K. Wong, C. Cabral, P. Jamison, B.H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchell, V. Ku, H. Kim, E. Duch, P. Kozlowski, C.D. Emic, V. Narayanan, A. Steegen, R. Wise, R. Jammy, R. Rengarajan, H. Ng, A. Sekiguchi, C.H. Wann, VLSI Tech. Dig., Honolulu, Hawaii, 2004, 186-187.
19. Sivasubramani P., Kim M.J., Gnade B.E., and Wallace R.M. Appl. Phys. Lett. 86 (2005) 201901
20. J.R. Hauser, K. Ahmed, AIP Conf. Proc. 449, Gaithersburg, Maryland, 1998, pp. 235-242.