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Applied Physics Letters

Volumn 93, Issue 9, 2008, Pages

Improved performance of Schottky diodes on pendeoepitaxial gallium nitride

(7) Zheleva, T a Derenge, M a Ewing, D a Shah, P a Jones, K a Lee, U a Robins, L b

a U S ARMY RESEARCH LABORATORY (United States)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEFECT DENSITY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LEAKAGE CURRENTS; NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

GAN MATERIAL; SCHOTTKY DIODES;

DIODES;

EID: 51349130054 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2978404 Document Type: Article

Times cited : (5)

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