Low leakage current ITO schottky electrodes for AlGaN/GaN HEMTs

IEICE Transactions on Electronics

Volumn E91-C, Issue 7, 2008, Pages 1015-1019

  Matsuda, Keita ^a   Kawasaki, Takeshi ^a   Nakata, Ken ^a   Igarashi, Takeshi ^a   Yaegassp, Seiji ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

AlGaN GaN HEMT; Gate leakage current; ITO; Schottky gate; Tunnel

Indexed keywords

ANNEALING; ELECTRODES; GALLIUM NITRIDE; GATE DIELECTRICS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACE STATES; NICKEL; SCHOTTKY BARRIER DIODES; SURFACE DEFECTS; TEMPERATURE DISTRIBUTION; TUNNELS; VACUUM EVAPORATION;

ALGAN/GAN HEMTS; GATE-LEAKAGE CURRENT; NITROGEN ATMOSPHERES; REVERSE LEAKAGE CURRENT; SCHOTTKY CHARACTERISTICS; SCHOTTKY GATE; TEMPERATURE DEPENDENCE; TUNNELING LEAKAGE CURRENT;

LEAKAGE CURRENTS;

EID: 67349095071     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.7.1015     Document Type: Article

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