Processes and device technologies for AlGaN/GaN high electron mobility transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Adesida, I ^a   Kumar, V ^a   Mohammed, F ^a   Wang, L ^a   Basu, A ^a   Kim, D H ^a   Lanford, W ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ALINGAN; DEVICE TECHNOLOGIES; HIGH-ELECTRON MOBILITY TRANSISTOR; MM WAVES; ULTRA-HIGH; ULTRA-HIGH FREQUENCIES;

ELECTRON DEVICES; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; HIGH FREQUENCY AMPLIFIERS; POWER AMPLIFIERS; TECHNOLOGY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 46049115125     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346797     Document Type: Conference Paper

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